Field-free magnetization reversal by spin-hall effect and exchange bias

1. Field-free Magnetization Switching by Utilizing the Spin Hall.
2. Field-free Magnetization Switching by Utilizing the Spin.
3. A spontaneous topological Hall effect driven by a non-coplanar.
4. Field-free magnetization reversal by spin-Hall effect and.
5. Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt.
6. Role of induced exchange bias in zero field spin-orbit torque.
7. Field free magnetization switching in perpendicularly... - ResearchGate.
8. Manipulating exchange bias by spinorbit torque | Nature.
9. field-free_spinorbit_torque_driven_multi-state_reversal_in" title="Field-free spinorbit torque driven multi-state reversal in...">Field-free spinorbit torque driven multi-state reversal in.">Field-free spinorbit torque driven multi-state reversal in...">Field-free spinorbit torque driven multi-state reversal in.
10. Field-free Magnetization Switching by Utilizing the Spin Hall Effect.
11. Eindhoven University of Technology MASTER Field-free.
12. Field-free spin-orbit torque switching of GdCo ferrimagnet.
13. Field-free magnetization reversal... preview amp; related info | Mendeley.
14. Efficient field-free perpendicular magnetization switching by.

Field-free Magnetization Switching by Utilizing the Spin Hall.

Nov 21, 2018 We attribute this observation to the distribution of exchange bias field and the mixture of internal and external field, which is attested by magneto-optical Kerr effect microscope. Our.

Field-free Magnetization Switching by Utilizing the Spin.

Anomalous Hall effect and magneto-optical Kerr effect microscopy measurements were performed to demonstrate that the field-free multi-level reversal is jointly determined by the spinorbit torque effective field that originates from the lack of the lateral inversion symmetry in the wedged stacking structure and the current-induced Oersted field.

A spontaneous topological Hall effect driven by a non-coplanar.

In this regard, we investigate the role of DMI and FLT in deterministic field-free SOT switching. This paper focuses on the dynamic switching in a perpendicularly magnetized multidomain FM layer circular dot with diameter of 100 nm via the joint effects of DMI and FLT. Demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium Ir layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field..

Field-free magnetization reversal by spin-Hall effect and.

The in-plane exchange bias field induced by the AFM layer... the collective spin Hall effect from Pt underlayer and Ta capping layer... Field-free magnetization reversal by spin-Hall effect and. Nov 15, 2022 Though a bias magnetic field is required to achieve reversible magnetization switching, these works pave the way to develop electrical manipulation of spintronics with ultralow-power. Switching perpendicular magnetization through voltage-induced O 2 or H migration, which usually needs a long response time, has also been demonstrated [35], [36]. By nanostructuring these orthogonal exchange biased samples, field-free deterministic magne- tization reversal is observed via the SHE; a breakthrough in the field of MRAM research. The external field is successfully replaced by the intrinsic field from the exchange bias.

Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt.

Mar 4, 2016 An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface. Aug 19, 2020 Recently, it has been shown that if the FM magnetic layer is replaced by a FM/AFM exchange coupled bilayer, SOT switching can be obtained under zero in-plane applied field. It is understood that the presence of the AFM can induce an exchange bias field H E B acting on the FM layer, which results in a field shift of the FM hysteresis loop.

Role of induced exchange bias in zero field spin-orbit torque.

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Field free magnetization switching in perpendicularly... - ResearchGate.

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Manipulating exchange bias by spinorbit torque | Nature.

Sep 29, 2015 An in-plane exchange bias EB is created, and shown to enable field-free SHE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface. Field-free SOT-induced magnetization reversal process: a Measured R H as a function of DC current without external magnetic field for Pt/... Van den Brink A, et al. Field-free magnetization reversal by spin-Hall effect and exchange bias. Nat. Commun. 2015; 7:10854. doi: 10.1038/ncomms10854. [PMC free article] [Google Scholar] 34. Lau YC. Exchange bias or exchange anisotropy has been discovered decades ago 10,11 and studied in detail. Recently, researchers have focused on FM/AFM systems in which the AFM exhibits a large Spin Hall Effect SHE in order to induce the SOT effect.

Field-free spinorbit torque driven multi-state reversal in...">Field-free spinorbit torque driven multi-state reversal in.

Jul 8, 2019 The spin valve is one of the most representative and successful examples of implementing the exchange bias based pinning of FM moment combined with giant magnetoresistance GMR or tunneling magnetoresistance TMR for information storage and processing technologies. 13 In general, exchange bias in a coupled AFM/FM system can be established by.

Field-free Magnetization Switching by Utilizing the Spin Hall Effect.

Feb 11, 2020 Exchange bias EB refers to a shift in the hysteresis loop along the magnetic field axis due to the interface exchange coupling between ferromagnetic FM and antiferromagnetic AFM materials. 18 This phenomenon has been widely studied because of the technological application in spintronic devices and magnetic recording. 7 Furthermore, a.

Eindhoven University of Technology MASTER Field-free.

Mar 1, 2023 Current-induced magnetization switching by spin-orbit torque SOT is of great importance for the energy-efficient operation of spin-based memory and logic devices. However, the requirement of an external in-plane magnetic field to deterministically switch the perpendicular magnetization of a device is a bottleneck for device application. Anomalous Hall effect and magneto-optical Kerr effect microscopy measurements were performed to demonstrate that the field-free multi-level reversal is jointly determined by the spin-orbit.

Field-free spin-orbit torque switching of GdCo ferrimagnet.

The reversal of exchange bias indicates that not only the magnetization of Co is switched from up to down but also the interfacial spins of IrMn are reversed Fig. 4a . This implies that.

Field-free magnetization reversal... preview amp; related info | Mendeley.

quot;Hall effect i.e., current-induced generation of transverse voltage is one of the most fundamental electron transport phenomena, and it usually appears in proportion to magnetization in. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface. Feb 18, 2019 Recalling the conventional field-annealing method used to induce exchange bias, two important elements are required: 1 the external field sets the FM magnetization direction and 2.

Efficient field-free perpendicular magnetization switching by.

Mar 8, 2022 Field-free SOT-induced switching of perpendicular magnetization, as a function of the injected current pulse along the y -axis, a at = 0 with counterclockwise- tilt and b at = 180 with clockwise- tilt. c Perpendicular magnetization reversals tested repeatedly. Deterministic field-free magnetization switching. ure 3a shows that the measured AHE Fig resistance as a function of a pulse current I applied along the [011 0] direction exhibits a hysteretic behavior and a sign change in the absence of applied magnetic field. This behavior reflects magnetization reversal in the multilayerNi/Co.